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? IRGR2B60KDPBF 1 www.irf.com ? 2012 international rectifier january 8, 2013 g c e gate collector emitter base part number package type standard pack orderable part number form quantity IRGR2B60KDPBF d-pak tube 75 IRGR2B60KDPBF tape and reel 2000 irgr2b60kdtrpbf tape and reel left 3000 irgr2b60kdtrlpbf tape and reel right 3000 irgr2b60kdtrrpbf v ces = 600v i c = 3.7a, t c = 100c t j(max) = 150c v ce(on) typ. = 1.95v e g n-channel c ? ? insulated gate bipolar transistor with ultra-fast soft recovery diode features ?? low v ce (on) non punch through igbt technology ?? low diode v f ?? 10s short circuit capability ?? square rbsoa ?? ultra-soft diode reverse recovery characteristics ?? positive v ce (on) temperature co-efficient ?? lead-free absolute maximum ratings ?? parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 6.3 i c @ t c = 100c continuous collector current 3.7 i cm pulse collector current, v ge = 15v ?? 8.0 i lm clamped inductive load current, v ge = 20v ? 8.0 a i f @ t c = 25c diode continuous forward current 6.3 i f @ t c = 100c diode continuous forward current 3.7 i fm diode maximum forward current ? 8.0 v ge continuous gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 35 w p d @ t c = 100c maximum power dissipation 14 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in.(1.6mm) from case) ? d-pak g e c thermal resistance ?? ? parameter min. typ. max. units r jc (igbt) junction-to-case (igbt) ? ??? ??? 3.56 r jc (diode) junction-to-case (diode) ? ??? ??? 7.70 c/w r ja junction-to-ambient (pcb mount) ? ??? ??? 50 benefits ?? benchmark efficiency for motor control ?? rugged transient performance for increased reliability ?? excellent current sharing in parallel operation ?? low emi
? IRGR2B60KDPBF 2 www.irf.com ? 2012 international rectifier january 8, 2013 electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ? ? v v ge = 0v, i c = 500a ? ? v (br)ces / ? t j temperature coeff. of breakdown voltage ? 0.49 ? v/c v ge = 0v, i c = 1ma (25c-150c) v ce(on) collector-to-emitter saturation voltage ? 1.95 2.25 v i c = 2.0a, v ge = 15v, t j = 25c ? 2.28 ? ? i c = 2.0a, v ge = 15v, t j = 150c v ge(th) gate threshold voltage 4.0 ? 6.0 v v ce = v ge , i c = 250a gfe forward transconductance ? 1.2 ? s v ce = 50v, i c = 2.0a, pw = 20s i ces collector-to-emitter leakage current ? 0.5 25 a v ge = 0v, v ce = 600v ?? ? 23 ? v ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop ? 1.3 1.6 v i f = 2.0a ? 1.1 ? i f = 2.0a, t j = 150c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions q g total gate charge (turn-on) ? 8.0 12 i c = 2.0a q ge gate-to-emitter charge (turn-on) ? 1.3 2.0 nc ? v ge = 15v q gc gate-to-collector charge (turn-on) ? 4.0 6.0 ? v cc = 400v e on turn-on switching loss ? 74 160 e off turn-off switching loss ? 39 120 j i c = 2.0a, v cc = 400v, v ge = 15v e tot total switching loss ? 113 280 ? r g = 100 ? , l = 7.1mh, t j = 25c t d(on) turn-on delay time ? 11 30 ? energy losses include tail & diode ? t r rise time ? 8.7 25 ns ? reverse recovery t d(off) turn-off delay time ? 150 170 ? t f fall time ? 56 75 ? e on turn-on switching loss ? 120 ? e off turn-off switching loss ? 68 ? j i c = 2.0a, v cc =400v, v ge =15v e tot total switching loss ? 188 ? ? r g = 100 ? , l = 7.1mh, t j = 150c t d(on) turn-on delay time ? 13 ? ? energy losses include tail & diode ? t r rise time ? 6.8 ? ns ? reverse recovery t d(off) turn-off delay time ? 170 ? ? t f fall time ? 110 ? ? c ies input capacitance ? 110 ? v ge = 0v c oes output capacitance ? 17 ? pf v cc = 30v c res reverse transfer capacitance ? 4.0 ? f = 1.0mhz t j = 150c, i c = 8.0a rbsoa reverse bias safe operating area full square v cc = 480v, vp 600v rg = 100 ? , v ge = +20v to 0v scsoa short circuit safe operating area 10 ? ? s t j = 150c, vp 600v, rg=330 ? v cc = 360v, v ge = +15v to 0v erec reverse recovery energy of the diode ? 19 30 j t j = 150c trr diode reverse recovery time ? 45 68 ns v cc = 400v, i f = 2.0a, l = 7.1mh irr diode peak reverse recovery current ? 5.8 8.7 a v ge = 15v, rg = 100 ? notes: ? v cc = 80% (v ces ), v ge = 20v, l = 200h, r g = 100 ? . ? pulse width limited by max. junction temperature. ? refer to an-1086 for guidelines for measuring v (br)ces safely. ? r ? is measured at t j of approximately 90c. ? fbsoa operating conditions only. ? when mounted on 1? square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994.
? IRGR2B60KDPBF 3 www.irf.com ? 2012 international rectifier january 8, 2013 25 50 75 100 125 150 t c (c) 0 1 2 3 4 5 6 7 i c ( a ) 1 10 100 1000 v ce (v) 0.01 0.1 1 10 i c ( a ) 10sec 100sec tc = 25c tj = 150c single pulse dc 1msec fig. 2 - maximum dc collector current vs. case temperature fig. 5 - reverse bias soa t j = 150c; v ge = 20v 25 50 75 100 125 150 t c (c) 0 5 10 15 20 25 30 35 p t o t ( w ) 10 100 1000 v ce (v) 1 10 i c ( a ) fig. 3 - power dissipation vs. case temperature fig. 4 - forward soa t c = 25c; t j 150c; v ge = 15v 0.1 1 10 100 f , frequency ( khz ) 1 2 3 4 5 6 l o a d c u r r e n t ( a ) for both: duty cycle : 50% tj = 150c tcase = 100c gate drive as specified power dissipation = 14w fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) i square wave: v cc diode as specified
? IRGR2B60KDPBF 4 www.irf.com ? 2012 international rectifier january 8, 2013 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v f (v) 0 2 4 6 8 10 i f ( a ) -40c 25c 150c fig. 7 - typ. igbt output characteristics t j = 25c; tp = 20s 0 2 4 6 8 10 v ce (v) 0 2 4 6 8 10 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0 2 4 6 8 10 v ce (v) 0 2 4 6 8 10 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v fig. 6 - typ. igbt output characteristics t j = -40c; tp = 20s 5101520 v ge (v) 0 2 4 6 8 10 v c e ( v ) i ce = 1.0a i ce = 2.0a i ce = 4.0a fig. 9 - typ. diode forward voltage drop characteristics 5101520 v ge (v) 0 2 4 6 8 10 v c e ( v ) i ce = 1.0a i ce = 2.0a i ce = 4.0a fig. 8 - typ. igbt output characteristics t j = 150c; tp = 20s fig. 10 - typical v ce vs. v ge t j = -40c fig. 11 - typical v ce vs. v ge t j = 25c 0 2 4 6 8 10 v ce (v) 0 2 4 6 8 10 i c e ( a ) vge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v
? IRGR2B60KDPBF 5 www.irf.com ? 2012 international rectifier january 8, 2013 46810121416 v ge (v) 0 2 4 6 8 10 12 i c e ( a ) t j = 25c t j = 150c 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 i c (a) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on fig. 13 - typ. transfer characteristics v ce = 50v; tp = 20s 5101520 v ge (v) 0 2 4 6 8 10 v c e ( v ) i ce = 1.0a i ce = 2.0a i ce = 4.0a 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 i c (a) 0 50 100 150 200 250 e n e r g y ( j ) e off e on fig. 12 - typical v ce vs. v ge t j = 150c fig. 15 - typ. switching time vs. i c t j = 150c; l = 7.1mh; v ce = 400v, r g = 100 ? ; v ge = 15v fig. 16 - typ. energy loss vs. r g t j = 150c; l = 7.1mh; v ce = 400v, i ce = 2.0a; v ge = 15v fig. 14 - typ. energy loss vs. i c t j = 150c; l = 7.1mh; v ce = 400v, r g = 100 ? ; v ge = 15v 0 100 200 300 400 500 r g ( ? ) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on fig. 17 - typ. switching time vs. r g t j = 150c; l = 7.1mh; v ce = 400v, i ce = 2.0a; v ge = 15v 0 100 200 300 400 500 r g ( ? ) 60 80 100 120 140 160 180 200 220 e n e r g y ( j ) e off e on
? IRGR2B60KDPBF 6 www.irf.com ? 2012 international rectifier january 8, 2013 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 i f (a) 5 10 15 20 25 30 35 e n e r g y ( j ) r g = 200 ? r g = 330 ? r g = 100 ? r g = 470 ? fig. 22 - typ. diode e rr vs. i f t j = 150c 0 100 200 300 400 500 v ce (v) 1 10 100 1000 c a p a c i t a n c e ( p f ) cies coes cres fig. 23 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz 40 80 120 160 200 240 di f /dt (a/s) 2.0 3.0 4.0 5.0 6.0 i r r ( a ) fig. 20 - typical diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i f = 2.0a; t j = 150c 50 100 150 200 250 300 di f /dt (a/s) 50 100 150 200 250 300 350 q r r ( n c ) 200 ? 330 ? 470 ? 100 ? 1.0a 2.0a 4.0a fig. 21 - typical diode q rr v cc = 400v; v ge = 15v; t j = 150c 0.0 1.0 2.0 3.0 4.0 5.0 i f (a) 2.0 3.0 4.0 5.0 6.0 7.0 i r r ( a ) r g = 330 ? r g = 200 ? r g = 470 ? r g = 100 ? fig. 18 - typical diode i rr vs. i f t j = 150c 100 150 200 250 300 350 400 450 500 r g ( ?? 2.0 3.0 4.0 5.0 6.0 i r r ( a ) fig. 19 - typical diode i rr vs. r g t j = 150c; i f = 2.0a
? IRGR2B60KDPBF 7 www.irf.com ? 2012 international rectifier january 8, 2013 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig. 24 - maximum transient thermal impedance, junction-to-case (igbt) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig. 25 - maximum transient thermal impedance, junction-to-case (diode) 012345678 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 400v v ces = 300v fig. 23 - typical gate charge vs. v ge i ce = 2.0a ri (c/w) ? i (sec) ? 0.073623 0.000004 1.265403 0.000072 1.345162 0.000715 0.877346 0.005046 ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4 ri (c/w) ? i (sec) ? 0.510125 0.000051 2.282292 0.000119 3.175748 0.001799 1.735309 0.014349 ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4
? IRGR2B60KDPBF 8 www.irf.com ? 2012 international rectifier january 8, 2013 0 1k vcc dut l l rg 80 v dut vcc + - fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit fig.c.t.4 - switching loss circuit fig.c.t.3 - s.c. soa circuit fig. c.t.5 - resistive load circuit dc 4x dut vcc r sh l rg vcc dut / driver diode clamp / dut -5v rg vcc dut r = vcc icm
? IRGR2B60KDPBF 9 www.irf.com ? 2012 international rectifier january 8, 2013 fig. wf1 - typ. turn-off loss waveform @ t j = 150c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 150c using fig. ct.4 fig. wf3 - typ. diode recovery waveform @ t j = 150c using fig. ct.4 fig. wf4 - typ. s.c. waveform @ t j = 150c using fig. ct.3 -2 0 2 4 6 8 10 -100 0 100 200 300 400 500 -1.5 -0.5 0.5 1.5 2.5 i ce (a) v ce (v) time(s) 90% i ce 5% v ce 5% i ce eoff loss tf -2 0 2 4 6 8 10 -100 0 100 200 300 400 500 -0.3 -0.1 0.1 0.3 0.5 i ce (a) v ce (v) time (s) test current 90% i ce 5% v ce 10% i ce tr eon loss -7 -6 -5 -4 -3 -2 -1 0 1 2 3 -0.10 0.00 0.10 0.20 i f (a) time (s) peak i rr t rr q rr 10% peak irr -10 0 10 20 30 40 50 -100 0 100 200 300 400 500 -5 0 5 10 15 ice (a) vce (v) time (s) v ce i ce
? IRGR2B60KDPBF 10 www.irf.com ? 2012 international rectifier january 8, 2013 d-pak (to-252aa) package outline dimensions are shown in millimeters (inches) d-pak (to-252aa) part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/
? IRGR2B60KDPBF 11 www.irf.com ? 2012 international rectifier january 8, 2013 d-pak (to-252aa) tape and reel information dimensions are shown in millimeters (inches) note: for the most current drawing please refer to ir website at http://www.irf.com/package/ tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch
? IRGR2B60KDPBF 12 www.irf.com ? 2012 international rectifier january 8, 2013 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ qualification information ? qualification level industrial ? moisture sensitivity level d-pak msl1 rohs compliant yes ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release.

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